Figure 3From: Sub-100-nm ordered silicon hole arrays by metal-assisted chemical etchingAg nanowire arrays formed on Si substrate. SEM image of Ag nanowire arrays formed on Si substrate through anodic porous alumina mask. Metal deposition was conducted in a solution of 2 × 10-2 mol dm-3 AgNO3 and 5 mol dm-3 HF for 5 s.Back to article page