Figure 10

Schematic of switching mechanism and I-V characteristics of cross-point memory devices. (a) Schematic representation of the TaO _x device consisting of a thin Ta₂O_5-x insulating layer and a TaO_2-x base layer. The movement of internal oxygen ions or vacancies is used to model the switching. (b) SEM image of a 30-nm crossbar array of devices with the inset showing a single device. (c) TEM cross-section of a 30-nm crossbar cell. The total thickness of TaO _x layer is 30 nm. (d) I-V hysteresis characteristics [31].