Figure 5From: TaO x -based resistive switching memories: prospective and challengesTEM image of W/TaO x /W structure. (a) Cross-sectional TEM image with a device size of 0.15 × 0.15 μm2. (b) HRTEM image inside the via-hole region. The thickness of TaO x film is approximately 6.8 nm.Back to article page