Table 1 Switching materials and SET/RESET current in published literature
From: TaO x -based resistive switching memories: prospective and challenges
RRAM materials with structure | Switching mode | Current | References | |
---|---|---|---|---|
SET | RESET | |||
Pt/NiO/Pt | Unipolar | 1 mA | >1 mA | Kim et al. [74] |
Pt/NiO/W | Unipolar | ~20 μA | ~500 μA | Ielmini et al. [75] |
Pt/NiO/Pt | Bipolar | 3 mA | ~3 mA | Jousseaume et al. [76] |
Pt/TiO2/TiO2-x/Pt | Bipolar | <200 μA | <200 μA | Yang et al. [77] |
Pt/Ti/TiO2/W and Pt/W/TiO2/W | Bipolar | 500 μA | 0.5 and 3 mA | Harmes et al. [78] |
Ir/TiO x /TiN | Bipolar | 1 mA | ~2 mA | Park et al. [79] |
TiN/TiO x /HfO x /TiN | Bipolar | 40-200 μA | 40-200 μA | |
Pt/ZrO x /HfO x /TiN | Bipolar | <200 μA | ~200 μA | Lee et al. [83] |
TiN/Ti/HfO2/TiN | Bipolar | 150 μA | ~100 μA | Walczyk et al. [84] |
Ta/HfO2/TiN | Bipolar | 100 μA | -- | Chen et al. [85] |
TiN/TiON/HfO x /Pt | Bipolar | 50 μA | 3050 μA | Yu et al. [86] |
Ni or Co/Cu2O/Cu | Unipolar | ~80 μA | ~100 μA | Chen et al. [87] |
Au or Pt/SrTiO3/Au or Pt | Bipolar | 2.8 ± 0.8 mA | 2.5 ± 0.5 mA | Szot et al. [43] |
Au/SrTiO3/Ti | Bipolar | 10 mA | ~2 mA | Sun et al. [88] |
Ti/ZrO2/Pt | Bipolar | 30 mA (self) | ~30 mA | Lin et al. [89] |
Cu/ZrO2:Ti/Pt | Bipolar | 1 mA | ~10 mA | Liu et al. [90] |
Ti/ZrO2/Pt | Bipolar | 5 mA | ~4 mA | Wang et al. [91] |
Ti/Mo:ZrO2/Pt | Bipolar | <20 mA | <30 mA | Wang et al. [92] |
TiON/WO x /W/TiN | Bipolar | 100 nA | 1 μA | Ho et al. [28] |
TiN/WO x /W | Unipolar | -- | -- | Chien et al. [93] |
Pt/WO x /W | Bipolar | 10 mA | ~10 mA | Kim et al. [30] |
Ti/Al2O3/Pt | Bipolar | >1 mA | ~7 mA | Lin et al. [94] |
Pt/Al2O3/TiN | Bipolar | 20 μA | ~20 μA | Wu et al. [96] |
IrO x /Al2O3/IrO x ND/Al2O3/IrO x | Bipolar | 500 μA | >1 mA | Banerjee et al. [97] |
Cu/ZnO/n+ | Unipolar | ~500 μA | ~3 mA | Qinan et al. [39] |
Pt/Mn:ZnO/Pt | Unipolar | 5 mA | ~17 mA | Peng et al. [98] |
Ti/ZnO/Ti | Nonpolar | 20 mA | -- | Andy et al. [99] |
Pt/ZnO/Pt | Bipolar | 3 mA | ~3 mA | Chiu et al. [100] |
Au/ZnO/Au | Bipolar | 10 mA | ~10 mA | Peng et al. [101] |
TiW/SiO x /TiW | Unipolar | ~100 μA | ~200 μA | Yao et al. [102] |
n-Si/SiO x /p-Si | Bipolar | 2 μA | ~100 μA | Mehonic et al. [103] |
Pt/Gd2O3/Pt | Unipolar | 10 mA | ~30 mA | Cao et al. [104] |
IrO x /GdO x /WO x /W | Bipolar | 1 mA | ~1 mA | Jana et al. [105] |
Pt/Al/Pr0.7Ca0.3MnO3/Pt | Bipolar | 1 mA | ~10 μA | Seong et al. [106] |
Ni/GeO x /HfON/TaN | Bipolar | 0.1 μA (self) | 0.3 nA | Cheng et al. [107] |
IrO x /Al2O3/GeNWs/SiO2/p-Si | Bipolar | 20 μA | 22 μA | Prakash et al. [108] |
Pt/TaO x /Pt | Bipolar | <170 μA | <170 μA | Wei et al. [109] |
IrO x /TaO x /WO x /W | Bipolar | 1 mA | 627 μA | Prakash et al. [116] |
Ta/TaO x /Pt | Bipolar | 100 μA | ~100 μA | Yang et al. [110] |
Pt/Ta2O5-x/TaO2-x/Pt | Bipolar | 200 μA | ~200 μA | Lee et al. [31] |