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Retraction Note: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface

The Original Article was published on 17 March 2014

Retraction

This article is retracted.

The journal editors would like to apologise for the early publication of the original article [1], which is being retracted as it was published prior to the completion of essential revisions.

The revised version of this article has now been published, and is available online [2].

References

  1. Prakash A, Maikap S, Chiu HC, Tien TC, Lai CS: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface. Nanoscale Research Letters 2013, 9: 152.

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  2. Prakash A, Maikap S, Chiu HC, Tien TC, Lai CS: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface. Nanoscale Research Letters 2014, 9: 125. 10.1186/1556-276X-9-125

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Additional information

The online version of the original article can be found at 10.1186/1556-276X-9-125

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Open Access This article is distributed under the terms of the Creative Commons Attribution 2.0 International License ( https://creativecommons.org/licenses/by/2.0 ), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Prakash, A., Maikap, S., Chiu, HC. et al. Retraction Note: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface. Nanoscale Res Lett 8, 419 (2013). https://doi.org/10.1186/1556-276X-8-419

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  • DOI: https://doi.org/10.1186/1556-276X-8-419