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Figure 5 | Nanoscale Research Letters

Figure 5

From: Charge transport mechanisms and memory effects in amorphous TaN x thin films

Figure 5

C -AFM measurements of a- TaN x . (a) Positive I-V curves (solid lines) of TaN x deposited on Au for four different points fitted by the space-charge-limited current (SCLC) model (dash lines). (b) Negative I-V curves (solid lines) of TaN x deposited on Au for the same points presented in (a) fitted by the SCLC model (dash lines). (c) Positive I-V curves of TaN x deposited on Si for three different points. The conductive part of the I-Vs exhibits an almost parabolic to almost ohmic behavior (d) Negative I-V curves of TaN x deposited on Si for the points presented in (b). In all I-Vs, the leakage current is quite high, displaying also a very noisy profile.

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