Table 1 Hysteresis and the calculated resistivity ratio at 3.5-V bias voltage
From: Charge transport mechanisms and memory effects in amorphous TaN x thin films
Point contact (Figure6, curves 1 to 7) | Hysteresis [ δI(nA)] at 3.5 V | Resistivity ratio at 3.5 V |
---|---|---|
1 a-TaN x on Au | 0.4 | >80 |
2 a-TaN x on Au | 0.2 | >40 |
3 a-TaN x on Au | 0.2 | >40 |
4 a-TaN x on Au | 0.5 | >100 |
5 a-TaN x on Si | 9.4 | 2.5 |
6 a-TaN x on Si | 2.7 | 2.2 |
7 a-TaN x on Si | 1.8 | 2.3 |