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Table 1 Hysteresis and the calculated resistivity ratio at 3.5-V bias voltage

From: Charge transport mechanisms and memory effects in amorphous TaN x thin films

Point contact (Figure6, curves 1 to 7)

Hysteresis [ δI(nA)] at 3.5 V

Resistivity ratio at 3.5 V

1 a-TaN x on Au

0.4

>80

2 a-TaN x on Au

0.2

>40

3 a-TaN x on Au

0.2

>40

4 a-TaN x on Au

0.5

>100

5 a-TaN x on Si

9.4

2.5

6 a-TaN x on Si

2.7

2.2

7 a-TaN x on Si

1.8

2.3

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