Figure 2From: Self-assembled growth of MnSi~1.7 nanowires with a single orientation and a large aspect ratio on Si(110) surfacesThe length distribution of the manganese silicide NWs formed on the Si(110) surface at different growth temperatures. During deposition, the Mn deposition rate and coverage were kept at approximately 0.02 ML/min and 1 ML, respectively.Back to article page