Temperature dependence of electrical characteristics of Pt/GaN Schottky diode fabricated by UHV e-beam evaporation

Table 1 Calculated Schottky diode parameters for Pt/n-GaN Schottky diodes

Temperature (K)	Ideality factor	Apparent SBH (eV)	Reverse leakage current (I_R) atV_R = -1 V
100	0.31	3.40	6 × 10^-11
140	0.45	2.41	1 × 10^-11
180	0.59	1.86	4 × 10^-11
220	0.72	1.51	2 × 10^-12
260	0.85	1.40	5 × 10^-11
300	1.03	1.48	5 × 10^-11
340	1.10	1.25	5 × 10^-11