Figure 4From: Stability scheme of ZnO-thin film resistive switching memory: influence of defects by controllable oxygen pressure ratioXRD results and TEM images. (a) XRD results of ZnO films deposited at different O2 pressure ratios. (b) Grain size, as the function of varied O2 pressure ratios. (c-e) Microstructures of ZnO films at different O2 pressure ratios.Back to article page