Figure 1
From: High performance of graphene oxide-doped silicon oxide-based resistance random access memory
RRAM device, resistive switching characteristic, reset voltage distributions, and distributions of HRS and LRS. (a) The RRAM device schematic structure. (b) Resistive switching characteristic comparison of single and double switching layer RRAM. (c) Comparison of reset voltage distributions. The lower inset shows the corresponding I-V curve of reset process in linear scale. (d) Distributions of HRS and LRS of Zr:SiO2 and Zr:SiO2/C:SiO2 RRAM devices.