Figure 2From: High performance of graphene oxide-doped silicon oxide-based resistance random access memoryCurrent fitting of HRS and LRS of Zr:SiO 2 and Zr:SiO 2 /C:SiO 2 RRAM devices, respectively (a, b). The activation energy of HRS and LRS for hopping conduction is 74.7 and 47.4 meV, respectively.Back to article page