Figure 1From: Comparison of resistive switching characteristics using copper and aluminum electrodes on GeOx/W cross-point memoriesSchematic illustration and optical image of the Cu/GeO x /W cross-point memories. (a) Schematic illustration and (b) optical image of our fabricated cross-point memory devices. Active area of the cross-point memory is approximately 1 × 1 μm2. The thickness of the GeO x solid electrolyte film is approximately 10 nm.Back to article page