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Figure 1 | Nanoscale Research Letters

Figure 1

From: Homogeneous crystalline FeSi2 films of c (4 × 8) phase grown on Si (111) by reactive deposition epitaxy

Figure 1

STM image of the typical silicide islands and line profile showing the heights of A and B islands. (a) STM image (400 × 400 nm2; Vs = 2.0 V; I = 0.15 nA) of the typical silicide islands grown at 650°C by depositing 1 ML of Fe on the Si (111) surface. E and U represent the etched region and unetched region, respectively. Three types of islands are observed. A and B are the tabular islands grown above and below the unetched Si-adatom layer, respectively. C is the three-dimensional islands. Most of the A islands exhibit an equilateral-triangle shape. (b) The line profile along the line in (a) shows that the heights of A and B islands with respect to the etched surface region are approximately 7.9 and 1.9 Å, respectively.

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