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Figure 3 | Nanoscale Research Letters

Figure 3

From: Homogeneous crystalline FeSi2 films of c (4 × 8) phase grown on Si (111) by reactive deposition epitaxy

Figure 3

STM image of the homogeneous c (4 × 8) iron silicide thin film and line profile. (a) STM image (2,000 × 2,000 nm2; Vs = 2.0 V; I = 0.2 nA) of the homogeneous c (4 × 8) iron silicide phase grown at 750°C by depositing 1.5 ML of Fe on the Si (111) surface. The largest area of the c (4 × 8) tabular island is up to approximately 1.0 μm2. (b) The line profile along the line in (a) shows that the height of the c (4 × 8) tabular islands is approximately 6.3 Å with respect to the substrate terrace.

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