Figure 3From: Effects of post-deposition annealing ambient on band alignment of RF magnetron-sputtered Y2O3 film on gallium nitrideBandgap and valence band offset of Y 2 O 3 and interfacial layer. (a) Bandgap of Y2O3 and IL for the sample annealed in different ambients. (b) Valence band offset of Y2O3/GaN and IL/GaN as a function of post-deposition annealing ambient.Back to article page