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Table 1 Comparison of the obtained Δ E c and Φ B values

From: Effects of post-deposition annealing ambient on band alignment of RF magnetron-sputtered Y2O3 film on gallium nitride

 

XPS: conduction band offset

  

J-E

 

Y 2 O 3 /GaN

IL/GaN

Y 2 O 3 /IL

Barrier height

O2

3.00

3.77

0.77

3.72

Ar

1.55

1.40

0.15

1.58

FG

0.99

0.68

0.31

0.92

N2

0.70

−2.03

2.73

a

  1. aNot influenced by FN tunneling. Therefore, barrier height is not extracted from the FN tunneling model.

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