Account

Table 1 L , R _avg , and AER of the SiNWs fabricated with different etching times

From: Realization of radial p-n junction silicon nanowire solar cell based on low-temperature and shallow phosphorus doping

t(min)	L(μm)	R_avg(%)	AER
0	0	35.79	1
2	1	8.14	9.06
5	2.5	5.98	21.15
10	5	3.62	40.31
20	10	2.97	81.62

t, L, R_avg, and AER are etching time, the length of the SiNWs, the average reflectivity (350 to 1,000 nm), and the surface area enhancement ratio, respectively.

Back to article page