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Table 1 L , R avg , and AER of the SiNWs fabricated with different etching times

From: Realization of radial p-n junction silicon nanowire solar cell based on low-temperature and shallow phosphorus doping

t(min) L(μm) Ravg(%) AER
0 0 35.79 1
2 1 8.14 9.06
5 2.5 5.98 21.15
10 5 3.62 40.31
20 10 2.97 81.62
  1. t, L, Ravg, and AER are etching time, the length of the SiNWs, the average reflectivity (350 to 1,000 nm), and the surface area enhancement ratio, respectively.