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Table 1 Subthreshold slope of TGN SB FET at different values of V DS

From: Analytical modeling of trilayer graphene nanoribbon Schottky-barrier FET for high-speed switching applications

VDS(mV)

1

1.1

1.2

1.3

1.4

1.5

Subthreshold slope (mV/decade)

59.5238

54.1419

49.6032

45.8085

42.5134

39.2542

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