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Table 1 Label and description of the QD samples under investigation

From: Effects of annealing on performances of 1.3-μm InAs-InGaAs-GaAs quantum dot electroabsorption modulators

Label

Description

AG

As-grown

600A

Annealed at 600°C for 10 s

750A

Annealed at 750°C for 10 s

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