Figure 4From: Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applicationsElectroluminescence measurements. Electroluminescence spectra of a single InGaN/GaN core-shell wire LED structure measured at 300 K with a metallic tip (> 20 V) for 2, 10, 25, 40 and 60 μA. The inset shows a schematic view of the contact.Back to article page