Figure 1From: Preferentially oriented BaTiO3 thin films deposited on silicon with thin intermediate buffer layersXRD patterns obtained for the BTO thin films. (a) BTO annealed at 700°C, with buffer layers of different thickness. (b) BTO annealed at different temperatures, with a 8.9-nm buffer layer. (c) BTO annealed at 700°C, with a 8.9-nm buffer layer, heat treated at 450°C and 600°C.Back to article page