Figure 2From: Preferentially oriented BaTiO3 thin films deposited on silicon with thin intermediate buffer layersXRD patterns obtained for BTO thin films. The films were deposited on a buffer layer with a thickness of 8.9 nm and a BTO seed layer of 30 nm (a) annealing after each 30-nm BTO layer deposition at different temperatures and (b) annealing at 700°C after each 30-nm BTO layer deposition or after four 30-nm BTO depositions (120 nm).Back to article page