Figure 3From: Preferentially oriented BaTiO3 thin films deposited on silicon with thin intermediate buffer layersSEM top view and cross-section images of BTO thin films. SEM top view of BTO films annealed at 700°C, with buffer layers of (a) 6 nm and (b) 7.2 nm. Cross-section images of the BTO film deposited at 700°C (c) deposited with a buffer layer of 6 nm as shown in (a) and (d) prepared with layer-by-layer annealing for each 30-nm layer, with a buffer layer of 8.9 nm.Back to article page