Preferentially oriented BaTiO3 thin films deposited on silicon with thin intermediate buffer layers

Table 1 Comparison of the BTO thin films deposited on different buffer layers with the bulk material

Phase	Source	Method	a= b(Å)	c(Å)	c/a ratio
Tetragonal (p4mm)	Our work	Sol–gel	3.994	4.038	1.011
Tetragonal	On MgO buffer layer[18]	MOCVD	3.990	4.04	1.012
Tetragonal	BTO ceramic[19]	Chemical processing	3.998	4.022	1.0058
Tetragonal	BTO single crystal[20]	Chemical processing	3.992	4.036	1.011