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Table 1 Comparison of the BTO thin films deposited on different buffer layers with the bulk material

From: Preferentially oriented BaTiO3 thin films deposited on silicon with thin intermediate buffer layers

Phase Source Method a= b(Å) c(Å) c/a ratio
Tetragonal (p4mm) Our work Sol–gel 3.994 4.038 1.011
Tetragonal On MgO buffer layer[18] MOCVD 3.990 4.04 1.012
Tetragonal BTO ceramic[19] Chemical processing 3.998 4.022 1.0058
Tetragonal BTO single crystal[20] Chemical processing 3.992 4.036 1.011