Figure 5From: Room temperature-synthesized vertically aligned InSb nanowires: electrical transport and field emission characteristicsField emission measurement system, J - E field emission curve, and surface band diagram of InSb nanowires. (a) The schematic diagram of field emission measurement system. (b) J-E field emission curve. The turn-on field of InSb nanowires is 1.84 V μm−1 at 1 μA cm−2, and the threshold field of InSb nanowires is 3.36 V μm−1 at 0.1 μA cm−2. Inset: F-N plot reveals the field emission behavior that follows F-N theory. (c) Schematic of the surface band diagram of the InSb nanowires.Back to article page