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Figure 6 | Nanoscale Research Letters

Figure 6

From: Si nanopatterning by reactive ion etching through an on-chip self-assembled porous anodic alumina mask

Figure 6

Cross-sectional SEM images of two samples. One non-annealed and one that was annealed in nitrogen gas before anodization. Cross-sectional view of sample 1 that was not annealed (images 1 of (a) and (b)) and sample 2 that was annealed at 500°C for 30 min in nitrogen gas before anodization for alumina formation (annealed; images 2 of (a) and (b)). Etching was performed for 20 s in SF6 (images 1 and 2 in (a)) and SF6/CHF3 (images 1 and 2 in (b)), respectively.

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