Figure 7From: Si nanopatterning by reactive ion etching through an on-chip self-assembled porous anodic alumina maskAlumina/Si interface of the Al-annealed sample. Cross-sectional SEM image of the interface PAA/Si of an Al-annealed sample at 500°C for 30 min in nitrogen gas. An undulation of the interface is depicted, attributed to Al diffusion into Si (due to the annealing) before anodization.Back to article page