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Table 2 Etch rate of Si through an Al mask compared to a SiO 2 mask with large openings

From: Si nanopatterning by reactive ion etching through an on-chip self-assembled porous anodic alumina mask

 

Large area Si etch rate (nm/min)

Etch rate through the PAA mask(pore diameter in the range of 35 to 45 nm) nm/min

SF6

700

140 – 180

SF6/O2

177

140 – 180

SF6/CHF3

170

65 – 85

  1. Etch rate of Si through a large area (100 × 100 μm2) SiO2 mask and a 400-nm thick PAA mask with pore diameter in the range of 35 to 45 nm. The difference in the etch rate is attributed to the small size of the etching windows, which is equal to the pore diameter in the case of the alumina mask.

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