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Figure 2 | Nanoscale Research Letters

Figure 2

From: Oxidative and carbonaceous patterning of Si surface in an organic media by scanning probe lithography

Figure 2

Etching test on lines written alternatively by oxidation or carbon deposition. On the left, AFM topography and height profiles of single lines written with opposite bias (±10-V tip bias, 0.5-μm s−1 writing speed). On the right, the same pattern after 1-min etching in aqueous HF 5 wt.%. The carbonaceous residual shows etch resistance while oxide is readily removed. Scale bare is 1 μm in both.

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