Figure 2From: Oxidative and carbonaceous patterning of Si surface in an organic media by scanning probe lithographyEtching test on lines written alternatively by oxidation or carbon deposition. On the left, AFM topography and height profiles of single lines written with opposite bias (±10-V tip bias, 0.5-μm s−1 writing speed). On the right, the same pattern after 1-min etching in aqueous HF 5 wt.%. The carbonaceous residual shows etch resistance while oxide is readily removed. Scale bare is 1 μm in both.Back to article page