Oxidative and carbonaceous patterning of Si surface in an organic media by scanning probe lithography

Table 1 Water contact angles, height/bias dependence, and correlation coefficient for oxidation on different Si surfaces

Surface termination	Contact angle of water droplet (°)	Slope (nm V⁻¹)	Correlation coefficient (adjusted R²)
Si(OH) native oxide layer	29 ± 0.9	0.40 ± 0.04	0.92
Si(H)^a	81 ± 1.2	0.37 ± 0.01	0.99
Si(CH₃)^b	89 ± 0.8	0.48 ± 0.04	0.95

Data in Figure4 have been used for linear fitting. At a constant writing speed (1 μm s⁻¹), an increase of 1 V in bias produce a height increase of approximately 0.4 nm; ^a30 s in aqueous HF 5 wt.%; ^bhexamethyldisilizane vapors for 1 h in moderate vacuum.