Figure 5From: Performance improvement of phase-change memory cell using AlSb3Te and atomic layer deposition TiO2 buffer layerResistance voltage characteristics of PCM cell at different pulse widths. (a) 2, (c) 4, and (e) 8 nm TiO2. Endurance characteristics of the PCM cell (b) with 2, (d) 4, and (f) 8 nm TiO2.Back to article page