Figure 4
From: On the formation of blisters in annealed hydrogenated a-Si layers
IR bending mode range. Gaussian deconvolution of a broad IR peak between approximately 835 and 1,000 cm−1 for the case of the sample hydrogenated at a rate of 0.4 ml/min (H content = 10.8 at.%) and annealed for 4 h. The two peaks at 853 (circles) and 887 (triangles) are due to the bending mode oscillations of Si di-hydrides. See text.