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Table 1 Results of EBSD analysis of bulk Si and PS surfaces covered with Cu

From: Comparative study of initial stages of copper immersion deposition on bulk and porous silicon

Sample type

Phase

Percentage (%)

Count

Area (mm2)

Orientation

Lattice cell

Cu/Si (100)

Not detected

15.9

437

0.03

None

Unsolved points

Silicon

42.9

1,182

0.07

(100)

Face-centered cubic system

Copper

28.2

778

0.05

(100)

Face-centered cubic system

Cu2O

13.0

357

0.02

(100)

Primitive cubic system

Cu/PS/Si (100)

Not detected

41.9

1,436

0.08

None

Unsolved points

Silicon

37.3

1,278

0.07

(100)

Face-centered cubic system

Copper

20.3

695

0.04

(100)

Face-centered cubic system

Cu2O

0.5

16

0.00

(100)

Primitive cubic system

Cu/Si (111)

Not detected

0.00

0

0.00

None

Unsolved points

Silicon

64.3

2,140

0.12

(111)

Face-centered cubic system

Copper

32.0

1,065

0.06

(111)

Face-centered cubic system

Cu2O

3.8

125

0.01

(111)

Primitive cubic system

Cu/PS/Si (111)

Not detected

26.0

863

0.05

None

Unsolved points

Silicon

49.5

1,642

0.10

(111)

Face-centered cubic system

Copper

23.2

770

0.04

(111)

Face-centered cubic system

Cu2O

1.3

42

0.00

(111)

Primitive cubic system

  1. Cu was deposited for 4 s from 0.025 M CuSO4ยท5H2O + 0.005 M HF aqueous solution.

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