In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots

Table 1 Growth parameters of sample 1 to sample 9

Samples	Growth temperature of SQD/QD (°C)	Growth rate (ML/s)	Deposition θ_c + Δ (ML)	Interruption time (s)	Annealing temperature (°C)
1	520/525	0.005	θ_c + 0.15	10	610
2	520/525	0.005	θ_c + 0.075	10	610
3	520/525	0.005	θ_c + 0.025	10	610
4	520/525	0.005	θ_c + 0	10	610
5	520/525	0.005	θ_c − 0.05	10	610
6	520/525	0.005	θ_c − 0.075	10	610
7	520/525	0.005	θ_c + 0	10	580
8	520/525	0.005	θ_c + 0	10	590
9	-/525	0.005	θ _c	10	-