Figure 3From: Effect of concurrent joule heat and charge trapping on RESET for NbAlO fabricated by atomic layer depositionThe typical resistive switching current–voltage curve of NbAlO-based RRAM device at different environmental temperatures. (a) 80, (b) 120, (c) 160, and (d) 200 K. The inset in (c) shows the schematic diagram of measured device structure and configuration. The I-V curve in different color indicates different resistive switching cycles.Back to article page