Figure 5From: High-performance bilayer flexible resistive random access memory based on low-temperature thermal atomic layer depositionThe behavior of the TiN/HfO 2 /Al 2 O 3 /ITO/PET memory cell under different pulses. HRS and LRS are read at 0.1 V, and the set and reset operations of the devices were achieved with different pulsing widths at ±5 V.Back to article page