Figure 1
From: On the origin of emission and thermal quenching of SRSO:Er3+ films grown by ECR-PECVD
Results of photoluminescence measurements. PL spectra of Si-NCs (VIS) doped with Er3+ (NIR) measured at 10 and 300 K at 488-nm excitation together with normalized PLE spectra detected at 0.81 eV for two Si concentrations: (a) 37 at.% and (b) 39 at.% of Si. The normalization was done for both spectra separately. Emission peak positions as function of temperature for two excitation wavelengths, 266 (squares) and 488 nm (circles), for two different Si concentrations, (c) 37 at.% and (d) 39 at.%, together with theoretically predicted Varshni formula. For the Varshni formula, Si bandgap at 0 K has been set as 2.3 eV for better data presentation.