Figure 4
From: On the origin of emission and thermal quenching of SRSO:Er3+ films grown by ECR-PECVD
Emission thermal quenching. Obtained for Si-NCs and Er3+-related bands at different excitation wavelengths (266, 488, and 980 nm) as function of temperature for two samples with 37 (a, b, c) and 39.at % of Si (d, e, f). Photon flux used for the experiment was equal to: Φ266 nm = 8 × 1019, Φ488 nm = 56 × 1019, Φ980 nm = 570 × 1019 (photons/s × cm2) for 266, 488, and 980 nm, respectively. These fluxes correspond to the lowest excitation power allowing performance of the experiment and are equal to excitation power of 0.6, 6, and 40 mW for 266, 488, and 980 nm, respectively. Abbreviations used are as follows: fQ, relative change in emission intensity at 10 and 500 K; EQ, quenching energy from Arrhenius fit.