Figure 1
From: Fabrication and electrical properties of MoS2 nanodisc-based back-gated field effect transistors
Schematic view of experimental setup and MoS 2 nanodisc-based back-gated FET. (a) Schematic view of the experimental setup of CVD. (b) MoS2 FET with 50-nm-thick Ni as contact electrodes together with electrical connections. The channel is the MoS2 nanodiscs, and 280-nm SiO2 serves as gate dielectric. The length and width of the channel are 1.5 and 5 μm, respectively.