Figure 4From: Fabrication and electrical properties of MoS2 nanodisc-based back-gated field effect transistorsThe current–voltage behavior of back-gated MoS 2 transistor. (a) Gate current IGS versus gate voltage VGS behavior of back-gated MoS2 transistor at room temperature for the drain voltage VDS value of 5 V. (b) Output characteristics of back-gated MoS2 transistors at room temperature for VGS values of 0, 5, 10, 15, and 20 V.Back to article page