Figure 5
From: Fabrication and electrical properties of MoS2 nanodisc-based back-gated field effect transistors
Transfer characteristics of back-gated MoS 2 transistor (a) and device transconductance versus gate voltage (b). (a) Transfer characteristics of MoS2 transistor at room temperature for the VDS value of 1 V on logarithmic (left axis) and linear scales (right axis). (b) Device transconductance gm (defined as gm = dIDS/dVGS) versus gate voltage VGS at VDS = 1 V.