Figure 3From: Pulsed laser-induced formation of silica nanogridsFluence dependence of the structure formation. Intensity distribution in the sample plane (a, f) (contrast enhanced for clarity) and corresponding patterns in 150-nm-thick SiO x films obtained with single pulses of varying fluences at 248 nm, mask period 40 μm (b to e), and mask period 20 μm (g to k).Back to article page