Figure 9From: Enhanced resistive switching phenomena using low-positive-voltage format and self-compliance IrO x /GdO x /W cross-point memoriesAC endurance and data retention characteristics. (a) Good AC endurance of more than 10,000 in every cycle of cross-point resistive switching memory device. Both resistances were read out at +0.2 V. (b) Good data retention characteristics of >104 s is obtained.Back to article page