Figure 5From: Electrochemically deposited gallium oxide nanostructures on silicon substratesFTIR spectra of hydrothermally and electrochemically grown structures. FTIR spectra of hydrothermally (pH = 8, T = 80°C, molarity of Ga2O3 = 0.05 M, time = 2 h) and electrochemically grown structures (pH = 8, J = 0.15 A/cm2, molarity of Ga2O3 = 0.05 to 1.0 M, time = 2 h).Back to article page