Figure 1From: Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealingSIMS profiles and X-ray diffraction scans. SIMS profiles of the different elements (Ga, As, Bi) within the QW structure (a); (004) X-ray diffraction ω/2θ transverse scans measured (black) and simulated (orange) for the QW structure (b).Back to article page