Figure 4From: Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealingAnnealing effect on QW PL. The 20-K PL spectra of the as-grown and annealed QW samples (a); room temperature time-resolved PL carrier decay time for the as-grown QW and those annealed at 650°C and 700°C (b).Back to article page