Figure 1From: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaO x interfaceTEM and HRTEM images of W/TiO x /TaO x /W (S1) and W/TaO x /W (S2) structures. (a) TEM image of fabricated W/TiO x /TaO x /W (S1) structure. HRTEM images of (b) W/TaO x /W (S2) and (c) W/TiO x /TaO x /W (S1) structures.Back to article page