Figure 9From: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaO x interfaceLong pulse endurance and good data retention. (a) Long read pulse endurance of >105 cycles and (b) good data retention of >104 s with a good resistance ratio of >102 at 85°C are obtained at a low CC of 80 μA. (c) Program/erase endurance of >1,000 cycles with a pulse width of 500 μs.Back to article page