Figure 1From: RETRACTED ARTICLE: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interfaceTEM and HRTEM images of W/TiOx/TaOx/W (S1) and W/TaOx/W (S2) structures. (a) TEM image of fabricated W/TiOx/TaOx/W (S1) structure. HRTEM images of (b) W/TaOx/W (S2) and (c) W/TiOx/TaOx/W (S1) structures. AES spectra of the TaOx layer were measured at the point marked in (c), before and after switching of the S1 memory devices.Back to article page